(Hong Kong)
Product Summary
The FM25256B-GTR is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
Parametrics
Absolute maximum ratings: (1)VDD, Power Supply Voltage with respect to VSS: -1.0V to +7.0V; (2)VIN, Voltage on any pin with respect to VSS: -1.0V to +7.0V and VIN < VDD+1.0V; (3)TSTG, Storage Temperature: -55℃ to + 125℃; (4)TLEAD, Lead Temperature (Soldering, 10 seconds): 300℃; (5)VESD, Electrostatic Discharge Voltage: Human Body Model (JEDEC Std JESD22-A114-D): 4KV; Charged Device Model (JEDEC Std JESD22-C101-C): 1KV; Machine Model (JEDEC Std JESD22-A115-A): 200V; (6)Package Moisture Sensitivity Level: MSL-1.
Features
Features: (1)256K bit Ferroelectric Nonvolatile RAM: Organized as 32,768 x 8 bits; Virtually Unlimited Endurance (1014 Cycles); 45 Year Data Retention; NoDelay Writes; Advanced High-Reliability Ferroelectric Process; (2)Very Fast Serial Peripheral Interface - SPI: Up to 20 MHz Frequency; Direct Hardware Replacement for EEPROM; SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1); (3)Write Protection Scheme: Hardware Protection; Software Protection; (4)Wide Operating Range: Wide Voltage Operation 4.0V ?5.5V; (5)Industry Standard Configurations: Industrial Temperature -40℃ to +85℃; 8-pin "Green"/RoHS SOIC (-G).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 FM25256B-GTR |
Ramtron |
F-RAM 256K (32Kx8) 5V |
Data Sheet |
Negotiable |
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Pricing (USD) |
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Data Sheet |
Negotiable |
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