(Hong Kong)
Product Summary
The TLP627-1 is a photo-transistor. It consists of a gallium arsenide infrared emitting diode optically coupled to a darlington connected phototransistor which has an integral base-emitter resistor to optimize switching speed and elevated temperature characteristics.
Parametrics
Absolute maximum ratings: (1)Forward Current:60mA; (2)Forward Current Derating:-0.7mA/℃(Ta≥39℃); (3)Pulse Forward Current:1A(100μs pulse,100pps) ; (4)Power Dissipation:(1 Circuit):100mW; (5)Power Dissipation Derating (Ta≥25℃,1 Circuit):-1.0mW/℃; (6)Reverse voltage:5V; (7)Junction Temperature:125℃; (8)Collector-Emitter Voltage:300V ; (9)Emitter -Collector Voltage:0.3V ; (10)Collector Current:150mA ; (11)Operating Temperature Range:-55℃ to 100℃; (12)Storage Temperature Range:-55℃ to 125℃; (13)Lead Soldering Temperature(10s):260(10sec)℃.
Features
Features: (1)Collector-Emitter Voltage: 300V(Min) ; (2)Current Transfer Ratio: 1000%(Min) ; (3)Isolation Voltage: 5000Vrms(Min) ; (4)UL Recognized: UL1577,File No.E67349.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 TLP627-1 |
Other |
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Data Sheet |
Negotiable |
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Pricing (USD) |
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