Product Summary

The NTE4151PT1G is a Small Signal MOSFET. Applications include High Side Load Switch, DC-DC Conversion, Small Drive Circuits and Battery Operated Systems such as Cell Phones, PDAs, DigitalCameras, etc.

Parametrics

NTE4151PT1G features: (1)Low RDS(on) for Higher Efficiency and Longer Battery Life; (2)Small Outline Package (1.6 x 1.6 mm); (3)SC-75 Standard Gullwing Package; (4)ESD Protected Gate; (5)Pb-Free Packages are Available

Features

NTE4151PT1G absolute maximum ratings: (1)Drain-to-Source Voltage: -20V; (2)Gate-to-Source Voltage: ±6.0V; (3)Continuous Drain Current: -760mA; (4)Pulsed Drain Current: ±1000mA; (5)Operating Junction and Storage Temperature: -55 to 150℃; (6)Continuous Source Current (Body Diode): -250mA; (7)Lead Temperature for Soldering Purposes: 260℃; (8)Gate-to-Source ESD Rating: 1800V.

Diagrams

NTE4151PT1G P−Channel MOSFET

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
NTE4151PT1G
NTE4151PT1G
ON Semiconductor
MOSFET -20V -760mA P-Channel
Data Sheet
0-1: $0.27
1-25: $0.16
25-100: $0.13
100-500: $0.08
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
NTE4151PT1G
NTE4151PT1G
ON Semiconductor
MOSFET -20V -760mA P-Channel
Data Sheet
0-1: $0.27
1-25: $0.16
25-100: $0.13
100-500: $0.08
NTE4153NT1G
NTE4153NT1G
ON Semiconductor
MOSFET 20V 915mA N-Channel
Data Sheet
0-1: $0.27
1-25: $0.16
25-100: $0.13
100-500: $0.08
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