(Hong Kong)
Product Summary
The NTE4151PT1G is a Small Signal MOSFET. Applications include High Side Load Switch, DC-DC Conversion, Small Drive Circuits and Battery Operated Systems such as Cell Phones, PDAs, DigitalCameras, etc.
Parametrics
NTE4151PT1G features: (1)Low RDS(on) for Higher Efficiency and Longer Battery Life; (2)Small Outline Package (1.6 x 1.6 mm); (3)SC-75 Standard Gullwing Package; (4)ESD Protected Gate; (5)Pb-Free Packages are Available
Features
NTE4151PT1G absolute maximum ratings: (1)Drain-to-Source Voltage: -20V; (2)Gate-to-Source Voltage: ±6.0V; (3)Continuous Drain Current: -760mA; (4)Pulsed Drain Current: ±1000mA; (5)Operating Junction and Storage Temperature: -55 to 150℃; (6)Continuous Source Current (Body Diode): -250mA; (7)Lead Temperature for Soldering Purposes: 260℃; (8)Gate-to-Source ESD Rating: 1800V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 NTE4151PT1G |
ON Semiconductor |
MOSFET -20V -760mA P-Channel |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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NTE4151PT1G |
ON Semiconductor |
MOSFET -20V -760mA P-Channel |
Data Sheet |
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Data Sheet |
Negotiable |
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