Product Summary

The BSM75GB120DN2 is a Half-bridge IGBT Module.

Parametrics

BSM75GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage: 1200V; (2)Collector-gate voltage: 1200V; (3)Gate-emitter voltage: ±20V; (4)Power dissipation per IGBT:625W; (5)Chip temperature: 150℃; (6)Storage temperature: -40 to 125℃.

Features

BSM75GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM75GB120DN2 Circuit Diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM75GB120DN2
BSM75GB120DN2
Infineon Technologies
IGBT Modules 1200V 75A DUAL
Data Sheet
0-1: $45.58
1-10: $41.02
BSM75GB120DN2_E3223
BSM75GB120DN2_E3223
Infineon Technologies
IGBT Modules N-CH 1.2KV 105A
Data Sheet
0-8: $41.48
8-10: $39.89
BSM75GB120DN2_E3223c-Se
BSM75GB120DN2_E3223c-Se
Infineon Technologies
IGBT Modules IGBT 1200V 75A
Data Sheet
0-6: $67.20
6-10: $60.60